A 120-Gbit/s 1.27-W 520-mVpp 2:1 Multiplexer IC Using Self-Aligned InP/InGaAs/InP DHBTs with Emitter Mesa Passivation
Author:
Affiliation:
1. Anritsu Devices
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/transele/E93.C/8/E93.C_8_1273/_pdf
Reference17 articles.
1. 132-Gb/s 4:1 multiplexer in 0.13-/spl mu/m SiGe-bipolar technology
2. A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology
3. Challenges in the Cell-Based Design of Very-High-Speed SiGe-Bipolar ICs at 100 Gb/s
4. [4] T. Suzuki, Y. Nakasha, T. Takahashi, K. Makiyama, T. Hirose, and M. Takikawa, “144-Gbit/s selector and 100-Gbit/s 4: 1 multiplexer using InP HEMTs,” IEEE MTT-S Int. Microwave Symp. Tech. Dig., pp.117-120, June 2004.
5. 120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 80 GBd 6‐bit DAC in InP DHBT for arbitrary waveform generator;Electronics Letters;2016-11
2. High-Bitrate-Measurement-System-Oriented Lower-Jitter 113-Gbit/s 2:1 Multiplexer and 1:2 Demultiplexer Modules Using 1-µm InP/InGaAs/InP Double Heterojunction Bipolar Transistors;IEICE Transactions on Electronics;2013
3. InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2011-05
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