InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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3. Effects of (NH4)2S passivation on graded-base InGaAs/InP HBTs;Zhi Jin;Phys. Status Solidi A: Appl. Res.,2004
4. High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base–collector heterojunction;Willen;IEEE Electron. Device Lett.,1995
5. InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition;Ohkubo;Appl. Phys. Lett.,1991
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1. Pressure Effect on Self-Trapped Exciton and Dopant Energy Transfer in Neodymium-Doped CsPbBr3 Perovskite Nanocrystals;The Journal of Physical Chemistry C;2022-12-05
2. InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2013-09
3. Metallic Functionally Graded Materials: A Specific Class of Advanced Composites;Journal of Materials Science & Technology;2013-04
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