Challenges in the Cell-Based Design of Very-High-Speed SiGe-Bipolar ICs at 100 Gb/s-Reference-Cited by-同舟云学术

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Challenges in the Cell-Based Design of Very-High-Speed SiGe-Bipolar ICs at 100 Gb/s

Published:2008-09 Issue:9 Volume:43 Page:1877-1888
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Moller Michael

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4625985/04625987.pdf?arnumber=4625987

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resolution-Related Design Considerations for a 120-GS/s 8-bit 2:1 Analog Multiplexer in SiGe-BiCMOS Technology;IEEE Journal of Solid-State Circuits;2021-09

2. 120 GSa/s BiCMOS AMUX for 360 Gbit/s High-Information-Rate Signal Generation Demonstrated in 10 km IM/DD System;Journal of Lightwave Technology;2021

3. 120 GSa/s BiCMOS Analog Multiplexer Enabling 360 Gbit/s DSCM-PCS-256QAM IM/DD Transmission;Optical Fiber Communication Conference (OFC) 2021;2021

4. A 120 GS/s 2:1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology;2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2020-11-16

5. A monolithic bipolar CMOS electronic–plasmonic high-speed transmitter;Nature Electronics;2020-06

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