On the Large Signal Evaluation and Modeling of GaN FET-Reference-Cited by-同舟云学术

On the Large Signal Evaluation and Modeling of GaN FET

Published:2010 Issue:8 Volume:E93-C Page:1225-1233
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

ANGELOV Iltcho¹,THORSELL Mattias¹,ANDERSSON Kristoffer¹,INOUE Akira²,YAMANAKA Koji²,NOTO Hifumi²

Affiliation:

1. GHz Centre, Dep. of Microtechnology and Nanoscience (MC2), Microwave Electronics Laboratory, Chalmers University of Technology

2. Information Technology R&D Center

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E93.C/8/E93.C_8_1225/_pdf

Reference26 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. [2] Y. Takayama, “A new load-pull characterization method for microwave power transistors,” Microwave Symposium Digest, MTT-S International, vol.76, pp.218-220, June 1976.

3. Accurate small-signal modeling of HFET's for millimeter-wave applications

4. [4] D. Jie, W. Weike, and W.R. Curtice, “Temperature-dependent RF large-signal model of GaN-based MOSHFETs,” IEEE Trans. Microw. Theory Tech., vol.56, no.12, pp.2709-2716, 2008.

5. A low-frequency GaAs MESFET circuit model

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