A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network

Author:

JEONG Yongchae1,CHAUDHARY Girdhari1,LIM Jongsik2

Affiliation:

1. Chonbuk National University

2. Soonchunhyang University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. [1] Y. Sub Noh and C.S. Park, “PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit,” IEEE J. Solid-State Circuits, vol.37, no.9, pp.1096-1099, Sept. 2002.

2. [2] K. Kunihiro, S. Yamanouchi, T. Miyazaki, Y. Aoki, K. Ikuina, T. Ohtsuka, and H. Hida, “A diplexer-matching dual-band power amplifier LTCC module for IEEE 802.11a/b/g wireless LANs,” IEEE Radio Frequency Integrated Circuits Symposium Digest, pp.303-306, June 2004.

3. [3] A. Adar, J. DeMoura, H. Balshem, and J. Lott, “A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets,” IEEE Gallium Arsenide Integrated Circuit (GaAs IC) SymposiumDigest, pp.69-72, Nov. 1998.

4. [4] S.M. Kang, J.H. Choi, S.W. Nam, and K. Heon Koo, “A novel 5GHz and 2.4GHz dual band transmitter using microstrip defected ground structure,” IEEE International Microwave Symposium Digest, pp.2259-2262, 2005.

5. [5] P. Colantonio, F. Giannini, R. Giofre, and L. Piazzon, “A design technique for concurrent dual-band harmonic tuned power amplifier,” IEEE Trans. Microw. Theory Tech., vol.56, no.11, pp.2545-2555, Nov. 2008.

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