4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching-Reference-Cited by-同舟云学术

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4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching

Published:2018-10-01 Issue:10 Volume:E101.C Page:751-758
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

MASHIMO Kazuki¹,ISHIKAWA Ryo¹,HONJO Kazuhiko¹

Affiliation:

1. Department of Communication Engineering and Informatics, University of Electro-Communications

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E101.C/10/E101.C_751/_pdf

Reference15 articles.

1. [1] N.O. Sokal and A.D. Sokal, “Class-E-A new class of high efficiency tuned single-ended switching power amplifiers,” IEEE J. Solid-State Circuits, vol.SC-10, pp.168-176, June 1975. 10.1109/jssc.1975.1050582

2. [2] F.H. Raab, “Class-F power amplifiers with maximally flat waveforms,” IEEE Trans. Microw. Theory Techn., vol.45, no.11, pp.2007-2012, Nov. 1997. 10.1109/22.644215

3. [3] S.C. Cripps, RF Power Amplifiers for Wireless Communications, 2nd ed., Artech House, Norwood, MA, 2006.

4. [4] S.H. Ji, C.S. Cho, J.W. Lee, and J. Kim, “Concurrent dual-band class-E power amplifier using composite right/left-handed transmission line,” IEEE Trans. Microw. Theory Techn., vol.55, no.6, pp.1341-1347, June 2007. 10.1109/tmtt.2007.895236

5. [5] R. Negra, A. Sadeve, S. Bensmida, and F.M. Ghannouchi, “Concurrent dual-band class-F load coupling network for applications at 1.7 and 2.14 GHz,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol.55, no.3, pp.259-263, March 2008. 10.1109/tcsii.2008.918993

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