Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films-Reference-Cited by-同舟云学术

Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films

Published:2012 Issue:11 Volume:E95.C Page:1724-1729
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

YASUNO Satoshi¹²,KITA Takashi²,MORITA Shinya³,HINO Aya³,HAYASHI Kazushi³,KUGIMIYA Toshihiro³,SUMIE Shingo¹

Affiliation:

1. Kobelco Research Institute, Inc.

2. Kobe University

3. KOBE STEEL, LTD.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E95.C/11/E95.C_1724/_pdf

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4. [4] J.K. Jeong, J.H. Jeong, H.W. Yang, J.-S. Park, Y.-G. Mo, and H.D. Kim, “High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel,” Appl. Phys. Lett., vol.91, 113505, 2007.

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