Design of broadband power amplifier based on continuous class-F mode with frequency parameterization
Author:
Affiliation:
1. Institute of Microelectronics, Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/16/6/16_16.20190038/_pdf
Reference29 articles.
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2. [2] N. Sokal and A. Sokal: “Class E – A new class of high-efficiency tuned single-ended switching power amplifiers,” IEEE J. Solid-State Circuits 10 (1975) 168 (DOI: 10.1109/JSSC.1975.1050582).
3. [3] C. Rong, et al.: “A class E GaN microwave power amplifier accounting for parasitic inductance of transistor,” IEEE Electron. Express 14 (2017) 20170127 (DOI: 10.1587/elex.14.20170127).
4. [4] J. Zhou, et al.: “Improved reactance-compensation technique for the design of wideband suboptimum class-E power amplifiers,” IEEE Trans. Microw. Theory Techn. 63 (2015) 2793 (DOI: 10.1109/TMTT.2015.2455505).
5. [5] Z. Hu, et al.: “C-band general class-J power amplifier using GaN HEMT,” IEICE Electron. Express 13 (2016) 20160483 (DOI: 10.1587/elex.13.20160483).
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