Effect of diode operating temperature on conducted-noise spectrum for CCM DC–DC boost converter
Author:
Affiliation:
1. Osaka University, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
General Medicine
Link
https://www.jstage.jst.go.jp/article/comex/3/9/3_269/_pdf
Reference6 articles.
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2. [2] T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, H. A. Mantooth, F. Barlow, T. Kimoto, and T. Hikihara, “Power conversion with SiC devices at extremely high ambient temperature,” IEEE Trans. Power Electron., vol. 22, no. 4, pp. 1321–1329, July 2007. DOI:10.1109/TPEL.2007.900561
3. [3] A. R. Hefner, R. Singh, J. Lai, D. Berning, S. Bouche, and C. Chapuy, “SiC power diodes provide breakthrough performance for a wide range of applications,” IEEE Trans. Power Electron., vol. 16, no. 2, pp. 273–280, March 2001. DOI:10.1109/63.911152
4. [4] B. Ozpineci and L. M. Tolbert, “Characterization of SiC Schottky diodes at different temperatures,” IEEE Power Electron. Lett., vol. 1, no. 2, pp. 54–57, June 2003. DOI:10.1109/LPEL.2003.821026
5. [5] T. Ibuchi and T. Funaki, “Loss and conducted noise characteristics for CCM PFC circuit with SiC-Schottky barrier diode,” IEICE Electron. Express, vol. 11, no. 6, 20140142, March 2014. DOI:10.1587/elex.11.20140142
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