Affiliation:
1. NTT Microsystem Integration Laboratories
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Observation of Coulomb-blockade oscillations by the back gate with subattofarad mutual capacitance
2. [2] S. Nakata, K. Saito, and M. Shimada, “Nonvolatile memory using Al2O3 film with an embedded Al-rich layer, ” Appl. Phys. Lett., vol. 87, p. 223110, 2005.
3. [3] E. Morifuji, T. Yoshida, H. Tsuno, Y. Kikuchi, S. Matsuda, S. Yamada, T. Noguchi, and M. Kakumu, “New guideline of Vdd and Vth scaling for 65nm technology and beyond, ” Proc. Symp. VLSI Tech. Dig., pp. 164-165, 2004.
4. Adiabatic SRAM with the large margin of Vth variation by the gradual change of the voltage
5. [5] L. Chang et al., “Stable SRAM Cell Design for the 32nm Node and Beyond, ”Proc. Symp. VLSI Tech. Dig., pp. 128-129, 2005.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low power SRAM using Adiabatic Logic;Journal of Physics: Conference Series;2020-12-01