Low-Temperature Softening Due to Vacancy Orbital with Γ8Quartet Ground State in Boron-Doped Floating Zone Silicon-Reference-Cited by-同舟云学术

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Low-Temperature Softening Due to Vacancy Orbital with Γ8Quartet Ground State in Boron-Doped Floating Zone Silicon

Published:2013-08-15 Issue:8 Volume:82 Page:084604
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Baba Shotaro¹,Akatsu Mitsuhiro¹²,Mitsumoto Keisuke¹³,Komatsu Satoru¹,Horie Kunihiko¹,Nemoto Yuichi¹,Yamada-Kaneta Hiroshi⁴,Goto Terutaka¹

Affiliation:

1. Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan

2. Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany

3. Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany

4. Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.7566/JPSJ.82.084604

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theory of Photon-Assisted Magnetoacoustic Resonance as a New Probe of Quadrupole Dynamics;Journal of the Physical Society of Japan;2020-02-15

2. Surface acoustic wave diagnosis of vacancy orbital with electric quadrupoles in silicon;Journal of Physics: Conference Series;2015-03-18

3. Elastic Softening of Surface Acoustic Wave Caused by Vacancy Orbital in Silicon Wafer;Journal of the Physical Society of Japan;2014-03-15

4. Strong Quadrupole-Strain Interaction of Vacancy Orbital in Boron-Doped Czochralski Silicon;Journal of the Physical Society of Japan;2013-12-15

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