Strong Quadrupole-Strain Interaction of Vacancy Orbital in Boron-Doped Czochralski Silicon-Reference-Cited by-同舟云学术

Strong Quadrupole-Strain Interaction of Vacancy Orbital in Boron-Doped Czochralski Silicon

Published:2013-12-15 Issue:12 Volume:82 Page:124604
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Okabe Kazuki¹²,Akatsu Mitsuhiro¹³,Baba Shotaro¹,Mitsumoto Keisuke¹⁴,Nemoto Yuichi¹,Yamada-Kaneta Hiroshi⁵,Goto Terutaka¹,Saito Hiroyuki²,Kashima Kazuhiko¹²,Saito Yoshihiko¹⁶

Affiliation:

1. Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan

2. GlobalWafers Japan Co., Ltd., Seirou, Niigata 957-0197, Japan

3. Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, D-01328 Dresden, Germany

4. Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany

5. Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Kitakyushyu 804-8550, Japan

6. Toshiba Corporation, Yokohama 225-8522, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.82.124604

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