Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. 1. P.V. Santos, A.R Zanatta., U. Jahn, A. Trampert, F. Dondeo, I.J. Chambouleyron, Laser interference structuring of α -Ge films on GaAs // Appl.Phys. 91 (5), p. 2916-2920 (2002).
2. 2. M.K. Kelly, J. Rogg, C.E. Nebel, M. Stutzmann, Sz. Kátai, High-resolution thermal processing of semiconductors using pulsed-laser interference pattering // Phys. status solidi (a), 166 (2), p. 651- 657 (1998).
3. 3. S.V. Vintsents, A.V. Zaitseva, V.B. Zaitsev, Genesis of nanoscale defects and damage in GaAs under the multi-pulse quasistatic photodeformations of the micron-sized areas of semiconductor // Fizika Tekhnika Poluprov. 38 (3), p. 257-264 (2004) (in Russian).
4. 4. V.A. Volodin, E.I. Gatskevich, A.V. Dvurechenskiy, M.D. Efremov, G.D. Ivlev, A.I. Nikiforov, D.A. Orehov, A.I. Yakimov, Modification of nanocluster of Ge in Si under action of pulse laser radiation // Ibid. 37 (11), p. 1352-1357 (2003).
5. 5. V.D. Andreeva, M.I. Anisimov, N.G. Dgumamuhambetov, A.G. Dmitriev, Structure of the GaAs〈Te〉 crystals modified by the pulse laser radiation // Ibid. 24 (6), p. 1010-1013 (1990).