Genesis of nanoscale defects and damage in GaAs subjected to multipulse quasi-static photostrains in micrometer-sized regions of semiconductor-Reference-Cited by-同舟云学术

Genesis of nanoscale defects and damage in GaAs subjected to multipulse quasi-static photostrains in micrometer-sized regions of semiconductor

Published:2004-03 Issue:3 Volume:38 Page:245-252
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vintsents S. V.,Zaitseva A. V.,Zaitsev V. B.,Plotnikov G. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1682319.pdf

Reference42 articles.

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2. A. V. Dvurechenskii, G. A. Kachurin, E. V. Nidaev, and L. S. Smirnov, Pulse Annealing of Semiconductor Materials (Nauka, Moscow, 1982).

3. Semiconductors and Semimetals, Vol. 23: Pulsed Laser Processing of Semiconductors, Ed. by R. F. Wood, C. W. White, and R. T. Young (Academic, New York, 1984).

4. N. G. Dzhumamukhambetov and A. G. Dmitriev, Pis’ma Zh. Tekh. Fiz. 17(13), 21 (1991) [Sov. Tech. Phys. Lett. 17, 467 (1991)].

5. V. D. Andreeva, M. I. Anisimov, N. G. Dzhumamukhambetov, and A. G. Dmitriev, Fiz. Tekh. Poluprovodn. (Leningrad) 24, 1010 (1990) [Sov. Phys. Semicond. 24, 635 (1990)].

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