Laser interference structuring of a-Ge films on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1448674
Reference19 articles.
1. Lateral structuring of silicon thin films by interference crystallization
2. Lateral Grain Growth during the Laser Interference Crystallization of a-Si
3. Dynamics of lateral grain growth during the laser interference crystallization of a-Si
4. Laser crystallization and structuring of amorphous germanium
5. Lateral structuring of III‐V quantum well systems with pulsed‐laser‐induced transient thermal gratings
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1. Analysis of the relief of the GaAs surface formed upon exposure to diffraction-modulated laser radiation;Russian Physics Journal;2007-11
2. Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation;Semiconductor physics, quantum electronics and optoelectronics;2007-10-31
3. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films;Journal of Applied Physics;2004-12
4. Chapter 4 Laser Interference Crystallization of Amorphous Films;Semiconductors and Semimetals;2003
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