Author:
Mosiuk T.I., ,Vernydub R.M.,Lytovchenko P.G.,Myroshnichenko Yu.B.,Stratilat D.P.,Tartachnyk V.P.,Shlapatska V.V., ,
Abstract
We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
Subject
Nuclear and High Energy Physics