Degradation-Reduction Features of Electrophysical Characteristics of Irradiated Gallium Phosphide Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Degradation-Reduction Features of Electrophysical Characteristics of Irradiated Gallium Phosphide Light-Emitting Diodes

Published:2021-08 Issue:2 Volume:140 Page:141-144
ISSN:1898-794X
Container-title:Acta Physica Polonica A
language:
Short-container-title:Acta Phys. Pol. A

Author:

Vernydub R.M.¹,Kyrylenko O.I.¹,Konoreva O.V.²,Radkevych O.I.³,Stratilat D.P.⁴,Tartachnyk V.P.⁴

Affiliation:

1. National Pedagogical Dragomanov University, Kyiv, Ukraine

2. E.O. Paton Electric Welding Institute of the NAS of Ukraine, Kyiv, Ukraine

3. SE ``SRI of Microdevices'' STC ``Institute for Single Crystals'' of the NAS of Ukraine, Kyiv, Ukraine

4. Institute for Nuclear Research of the NAS of Ukraine, Kyiv, Ukraine

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs;Nuclear Physics and Atomic Energy;2023-03-25

2. Degradation and recovery features of irradiated GAP LEDs;Nuclear Physics and Atomic Energy;2022-06-25

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