Author:
Budnyk O.P., ,Vernydub R.M.,Kyrylenko O.I.,Lytovchenko P.G.,Radkevych O.I.,Stratilat D.P.,Tartachnyk V.P., , ,
Abstract
The homo-transitional original and irradiated by electrons with E = 2 MeV; F = 5.9⋅1014 cm-2 ÷ 8.2⋅1016 cm-2 GaP LEDs were studied. The effect of radiation treatment on their electrical and optical characteristics was studied; the results of isochronous annealing of irradiated samples are given; the consequences of high-temperature annealing of output diodes are analyzed. Peculiarities of the formation of the current-voltage characteristics of red LEDs doped with Zn, O, and green LEDs doped with N under reverse bias, as well as features of the recovery of the reverse current during annealing of both types of LEDs, are revealed.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
Subject
Nuclear and High Energy Physics