Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions-Reference-Cited by-同舟云学术

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Published:2015-09-28 Issue:13 Volume:107 Page:132106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hammersley S.¹^ORCID,Kappers M. J.²,Massabuau F. C.-P.²,Sahonta S.-L.²,Dawson P.¹^ORCID,Oliver R. A.²^ORCID,Humphreys C. J.²

Affiliation:

1. School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom

2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4932200

Reference37 articles.

1. Evaluation of the internal quantum efficiency in blue and green light-emitting diodes using the rate equation model

2. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

3. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

4. Effect of Si doping in barriers of InGaN/GaN multiple quantum wells on the performance of green light-emitting diodes

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