Effect of Si doping in barriers of InGaN/GaN multiple quantum wells on the performance of green light-emitting diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=2/a=022102/pdf
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1. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
2. Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy
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