Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers-Reference-Cited by-同舟云学术

Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers

Published:2022-04 Issue: Volume:900 Page:163519
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Lachowski Artur,Grzanka Ewa,Grzanka Szymon,Czernecki Robert,Grabowski Mikołaj,Hrytsak Roman,Nowak Grzegorz,Leszczyński Mike,Smalc-Koziorowska Julita

Funder

Narodowe Centrum Nauki

European Regional Development Fund

European Commission

Fundacja na rzecz Nauki Polskiej

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference27 articles.

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2. Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD;Li;Opt. Express,2018

3. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz;Moustakas;Rep. Prog. Phys.,2017

4. In-situ observation of InGaN quantum well decomposition during growth of laser diodes;Hoffmann;Cryst. Res. Technol.,2015

5. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth;Li;Appl. Phys. Lett.,2013

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1. TCAD Design of Deep-Ultraviolet LED Based on ZnO/AlGaN Multiple Quantum Wells with Tunable Wavelength;Physics of the Solid State;2024-07

2. Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm⁻²) with device sizes down to 3 μm;Japanese Journal of Applied Physics;2024-03-01

3. Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability;Materials Science in Semiconductor Processing;2023-11

4. Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system;New Journal of Physics;2022-12-01