Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators-Reference-Cited by-同舟云学术

Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators

Published:2006-04-30 Issue:2 Volume:9 Page:40-44
ISSN:1560-8034
Container-title:Semiconductor physics, quantum electronics and optoelectronics
language:
Short-container-title:Semicond. phys. quantum electron. optoelectron.

Author:

Ahmad Ibrahim, , ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. 1. H. Xiao, Introduction to semiconductor manu-facturing technology, Prentice Hall, 2004.

2. 2. M. Quirk and J. Serda, Semiconductor manu-facturing technology, Prentice Hall, 2001.

3. 3. Rosfariza bt. Radzali, Fabrication and charac-terization of a 0.13 micron device, M.Sc. Thesis, University Kebangsaan, Malaysia, 2004.

4. 4. S. Xiong and J. Ding, Impact of parameter variation on future circuit performance, technical report. [Online] Available: http://mechatro2.me.berkeley.edu/ ~jgding/ee241/.

5. 5. C.K. Chen, C.L. Chen, P.M. Gouker, P.W. Wyatt, D.R. Yost, J.A. Burns, V. Suntharalingam, M. Fritze, and C.L. Keast, Fabrication of self-aligned 90 nm fully depleted SOI CMOS SLOTFETs // IEEE Electron Device Lett. 22(7), p. 345-347 (2001).

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