Abstract
This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5...25 hours). This is the most cost-effective way to create material for semiconductor devices and solar cells with stable parameters.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials