Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon-Reference-Cited by-同舟云学术

Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

Published:2020-11-19 Issue:04 Volume:23 Page:361-365
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:SPQEO

Author:

Bakhadyrkhanov M.K., ,Ismaylov B.K.,Tachilin S.A.,Ismailov K.A.,Zikrillaev N.F., , , ,

Abstract

The results of this study show that creation of clusters from impurity nickel atoms almost completely suppresses generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectroscopy, which revealed that the typical cluster consists of silicon atoms (65%), nickel atoms (15%) and oxygen atoms (19%). Based on the experimental results, the authors have suggested that the nickel atoms intensively perform the role of getter for oxygen atoms in the course of clusterization. It was shown that the additional doping of silicon with nickel at T = 1100…1200 °C enables to ensure a sufficiently high thermal stability of its electrical parameters within a wide temperature range.

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

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3. 3. Astashchenkov А.S., Brinkevich D.I., Petrov V.V. Properties of silicon doped with nickel impurity by using diffusion methods. Doklady Belorusskogo gos. universiteta informatiki i radioelektroniki. 2018. 38, No 8. P. 37-43 (in Russian).

4. 4. Bakhadyrkhanov M.K., Ismailov K.A., Ismaylov B.K., Saparniyazova Z.M. Clusters of nickel atoms and controlling their state in silicon lattice. SPQEO. 2018. 21, No 4. P. 392-396.

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