Fermi-level pinning at metal/4H-SiC contact induced by SiC x O y interlayer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6e06/pdf
Reference39 articles.
1. Status and prospects for SiC power MOSFETs
2. Silicon carbide: A unique platform for metal-oxide-semiconductor physics
3. Material science and device physics in SiC technology for high-voltage power devices
4. Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation
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1. Effect of ZnO Interlayer on Pt/4H–SiC Schottky Contact;Transactions on Electrical and Electronic Materials;2022-05-26
2. Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height;Applied Physics Express;2021-12-17
3. Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures;Semiconductor Science and Technology;2021-12-10
4. Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion;Japanese Journal of Applied Physics;2021-06-28
5. Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes;Semiconductor Science and Technology;2021-04-20
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