Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth-Reference-Cited by-同舟云学术

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Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth

Published:2021-10-11 Issue:11 Volume:60 Page:115501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishikawa Yukari^ORCID,Sugawara Yoshihiro,Yao Yongzhao^ORCID,Noguchi Naoto,Takeda Yukihisa,Yamada Hisashi^ORCID,Shimizu Mitsuaki,Tadatomo Kazuyuki

Funder

Japan Society for the Promotion of Science

“Knowledge Hub Aichi” Priority Research Project from Aichi Prefectural Government III

Kazuchika Okura Memorial Foundation

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ac2ae5/pdf

Reference34 articles.

1. The 2018 GaN power electronics roadmap

2. Recent development of vertical GaN power devices

3. GaN Technology for Power Electronic Applications: A Review

4. Bulk GaN crystals grown by HVPE

5. Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of multiphoton photoluminescence in characterization of GaN dislocations;Journal of Materials Science: Materials in Electronics;2024-07

2. Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns;Journal of Materials Science;2024-02

3. The Construction of a Lattice Image and Dislocation Analysis in High-Resolution Characterizations Based on Diffraction Extinctions;Materials;2024-01-24

4. Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography;Journal of Applied Physics;2023-10-18

5. Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN;Journal of Physics D: Applied Physics;2022-10-18

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