Step-edge and kink segregation models for analysis of reported step-velocity dependences of carbon concentration in GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab91cf/pdf
Reference34 articles.
1. The Blue Laser Diode
2. Gallium Nitride and Silicon Carbide Power Devices
3. Carbon impurities and the yellow luminescence in GaN
4. Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
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1. Analysis of reported substrate-misorientation and growth-temperature dependences of alloy composition in metalorganic vapor-phase epitaxially grown c-plane InGaN;Journal of Crystal Growth;2023-07
2. Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory;Applied Physics Letters;2022-12-19
3. Models for Impurity Incorporation during Vapor-Phase Epitaxy;Materials Science Forum;2022-05-31
4. Analysis of step-velocity-dependent concentration of magnesium in GaN based on Burton−Cabrera−Frank theory and step-edge segregation model;Japanese Journal of Applied Physics;2021-12-01
5. Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN;Japanese Journal of Applied Physics;2020-12-23
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