The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC
Author:
Funder
Ministry of Education, Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6a27/pdf
Reference40 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Material science and device physics in SiC technology for high-voltage power devices
3. Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector
4. Thermodynamic evaluation of the C–Cr–Si, C–Ti–Si, and C–Fe–Si systems for rapid solution growth of SiC
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical Simulation of the Melt-Back Process During Top-Seeded Growth of Sic Crystal in the Pure Silicon Solvent;2024
2. Optimization of Carbon Transport in Top-Seeded Solution Growth of Al-Doped Sic;2024
3. Review of solution growth techniques for 4H-SiC single crystal;China Foundry;2023-03
4. Numerical investigation of solute evaporation in crystal growth from solution: A case study of SiC growth by TSSG method;Journal of Crystal Growth;2022-02
5. Suppressing solvent compositional change during solution growth of SiC using SiC/C gradient crucible;Journal of Crystal Growth;2021-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3