Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector-Reference-Cited by-同舟云学术

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Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector

Published:2014-12 Issue: Volume:81 Page:284-290
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Harada Shunta,Yamamoto Yuji,Seki Kazuaki,Horio Atsushi,Tagawa Miho,Ujihara Toru

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

3. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

4. Degradation of hexagonal silicon-carbide-based bipolar devices

5. Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds;Journal of Crystal Growth;2024-05

2. Faceted-rough surface in the non-equilibrium steady state near equilibrium;Journal of Crystal Growth;2024-04

3. Impurities and defects in 4H silicon carbide;Applied Physics Letters;2023-05-01

4. Review of solution growth techniques for 4H-SiC single crystal;China Foundry;2023-03

5. Development of High-Resolution Nuclear Emulsion Plates for Synchrotron X-Ray Topography Observation of Large-Size Semiconductor Wafers;Journal of Electronic Materials;2023-02-06

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