Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6d84/pdf
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1. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
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