Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach-Reference-Cited by-同舟云学术

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Published:2021-06-11 Issue:7 Volume:60 Page:070903
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liao Yaqiang^ORCID,Chen Tao,Wang Jia^ORCID,Ando Yuto^ORCID,Cai Wentao,Yang Xu,Watanabe Hirotaka,Hirotani Jun,Tanaka Atsushi,Nitta Shugo^ORCID,Honda Yoshio,Chen Kevin J.,Amano Hiroshi

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ac06b5/pdf

Reference30 articles.

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3. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

4. Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

5. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

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1. Bottom-up vertical GaN nanocolumn Schottky barrier diodes with extremely high packing density grown by molecular beam epitaxy;Japanese Journal of Applied Physics;2024-01-23

2. Microwave Schottky Diodes based on Single GaN Nanowires;Technical Physics Letters;2023-12

3. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process;Applied Physics Letters;2022-03-21