Abstract
Abstract
To evaluate the impact of gate structures on the switching performance (R
on
Q
g) and cost (required chip size, proportional to R
on
A) of GaN vertical MOSFETs, we calculated the R
on
AR
on
Q
g of trench-gate structures with and without a countermeasure to reduce the electric field applied to the gate insulator, as well as a planar structure with various cell pitches, channel mobilities, and blocking voltages. When the blocking voltage was 600 V, the planar-gate structure achieved the lowest R
on
AR
on
Q
g owing to its low Q
g/A, despite the high R
on
A. However, when the blocking voltage was 1800 V, a trench-gate structure without the countermeasure achieved the lowest R
on
AR
on
Q
g owing to its low R
on
A and optimal cell pitch. The R
on
AR
on
Q
g of a trench-gate structure with a countermeasure and planar-gate structure became close with increasing channel mobility. This indicates that high channel mobility is the most important factor, rather than the selection of the device structure.
Funder
Council for Science, Technology and Innovation
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
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