The reliabilities of HfO2-based ferroelectric devices under swift heavy ion irradiation

Abstract

Abstract The effects of heavy ion irradiation on the electrical response of HfO2-based ferroelectric capacitors have been studied. All the hysteresis loops measured from the irradiated samples shifted toward the positive voltage. The remanent polarization and relative permittivity of the capacitors decrease with increasing ion fluence. The leakage current exhibit negligible change after irradiation. The main reason causing the phenomena is swift heavy ions (SHIs) induced the pinning of domain walls, attributed to the phase transition. This work provides the possible physical mechanisms of SHIs irradiation on HfO2-based ferroelectrics, which is of significance for the space application of HfO2-based ferroelectric random access memory.