Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography-Reference-Cited by-同舟云学术

Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography

Published:2020-08-20 Issue:9 Volume:59 Page:091002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shinagawa Naoto,Izawa Takuto,Manabe Morino,Yamochi Tsuyoshi,Ohtani Noboru^ORCID

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/abab46/pdf

Reference26 articles.

1. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

2. Relationship between threading dislocation and leakage current in 4H-SiC diodes

3. Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide

4. Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

5. Structure of the carrot defect in 4H-SiC epitaxial layers

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2. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

3. 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography;Japanese Journal of Applied Physics;2024-01-04

4. Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging;Diamond and Related Materials;2023-10

5. Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage;Crystal Growth & Design;2023-06-05