Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor-Reference-Cited by-同舟云学术

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Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

Published:2020-05-12 Issue:SM Volume:59 Page:SMMB03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Song Hyun-Dong,Song Hyeong-Sub,Eadi Sunil Babu,Choi Hyun-Woong,Shin Hyun-Jin,Lee Jae Woo,Yang Ji-Woon,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ab8e1c/pdf

Reference37 articles.

1. Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

2. Nitrogen and Hydrogen Induced Trap Passivation at the SiO₂/4H-SiC Interface

3. Beneficial effect of post-metallization H2annealing on Ta2O5stack capacitors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET;Scientific Reports;2022-11-02

2. Indium-gallium–zinc oxide (IGZO) thin-film gas sensors prepared via post-deposition high-pressure annealing for NO2 detection;Sensors and Actuators B: Chemical;2022-02

3. Correlation between low-frequency noise and interface traps of fully-depleted silicon-on-insulator tunneling FETs induced by hot carrier stress;Japanese Journal of Applied Physics;2020-10-01

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