Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide-Reference-Cited by-同舟云学术

Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

Published:2011-07-18 Issue:3 Volume:99 Page:033508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

DiLello Nicole A.,Hoyt Judy L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3615800

Reference21 articles.

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2. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

3. Ge on Si p-i-n photodiodes operating at 10Gbit∕s

4. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

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