TEM characterization of defects in κ-(In x Ga1−x )2O3 thin film grown on (001) FZ-grown ε-GaFeO3 substrate by mist CVD

Abstract

Abstract We have characterized defects in κ-(In x Ga1–x )2O3 thin films grown on (001) FZ-grown ε-GaFeO3 substrates by mist CVD using TEM. We found two types of defects: dislocation half-loops and microdefects. The half-loops are U-shaped and lie on the (100) plane. From contrast experiment, their Burgers vector was determined to be parallel to 〈010〉. While the microdefects were observed just above the interface between the κ-(In x Ga1–x )2O3 film and the ε-GaFeO3 substrate. They are 5–15 nm in size and accompany strong strain field. From (010) high-resolution transmission electron microscopic observation, it has been found that they are planar defects lying on the (001) plane. From these results, generation mechanisms of these defects are discussed.