In-plane anisotropy in the direction of the dislocation bending in α-Ga2O3 grown by epitaxial lateral overgrowth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/abbfe2/pdf
Reference31 articles.
1. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
2. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
3. Fundamental energy gap of GaN from photoluminescence excitation spectra
4. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
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1. Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy;Applied Physics Express;2022-06-14
2. Development of a-Ga2O3 Power Devices;2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia);2022-05-15
3. Dislocation dynamics in α-Ga2O3 micropillars from selective-area epitaxy to epitaxial lateral overgrowth;Applied Physics Letters;2022-03-21
4. α-Gallium Oxide Films on Microcavity-Embedded Sapphire Substrates Grown by Mist Chemical Vapor Deposition for High-Breakdown Voltage Schottky Diodes;ACS Applied Materials & Interfaces;2022-01-18
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