Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration
Author:
Funder
Core Research for Evolutional Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab9875/pdf
Reference31 articles.
1. The electron–hole bilayer tunnel FET
2. Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation
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