An In0.53Ga0.47As/In0.52Al0.48As/In0.53Ga0.47As double hetero-junction junctionless TFET-Reference-Cited by-同舟云学术

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An In0.53Ga0.47As/In0.52Al0.48As/In0.53Ga0.47As double hetero-junction junctionless TFET

Published:2021-06-10 Issue:7 Volume:60 Page:074001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Hu^ORCID,Yang Lin-An,Zhang Huawei,Zhang Bingtao,Zhang Wenting

Funder

the Project of Construction of a strong Province with Intellectual Property Rights

National Natural Science Foundation of China

Youth Science Foundation of Lanzhou Jiaotong University

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ac0611/pdf

Reference41 articles.

1. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Dielectric Engineered Tunnel Field-Effect Transistor

4. Tunnel Field-Effect Transistor With an L-Shaped Gate

5. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers;Physica Scripta;2024-07-04

2. Design and Performance Optimization of InGaAs/InAlAs Dopingless Tunnel Field-effect Transistor;Journal of Physics: Conference Series;2023-10-01

3. OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N+-Pocket;Materials;2022-10-06

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