Growth of high-quality GaN by halogen-free vapor phase epitaxy
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/aba494/pdf
Reference36 articles.
1. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
2. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
3. Gallium nitride devices for power electronic applications
4. Recent progress of GaN power devices for automotive applications
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation;physica status solidi (b);2024-02-29
2. Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy;Applied Physics Letters;2024-01-29
3. Origins of Electrical Compensation in Si‐Doped HVPE GaN;physica status solidi (b);2023-02-19
4. Vacancy Defects in Bulk and Quasi-Bulk GaN Crystals;Crystals;2022-08-09
5. Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices;Nanoscale Advances;2022
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3