Dependence of Ta2O5 memristor storage and synaptic performances on oxygen content

Author:

Liu Kunming,Wang Fang,Shan Xin,Shan Ke,Ma Zexia,Hu Kai,Guo Hongling,Song Zhitang,Zhang Kailiang

Abstract

Abstract In order to meet the exponentially increased demand for data processing, researchers are exploring memristors to emulate synapse or in-memory computing. To further enhance its performance, the impact of oxygen content on storage and synaptic performances is investigated based on Ag/Ta x O y /ITO memristors. The conductive filament-dominated mechanism with two kinds of ions is validated by multiple methods. By optimizing the oxygen content, the synaptic weight modulation ability increased almost sevenfold. Additionally, Boolean logic operations are implemented with >105 switching cycles and in situ stored for more than 105 s. Our work lays the foundation for optimizing memory storage and neuromorphic performances in future in-memory computing.

Funder

National Key Research and Development Program of China

Natural Science Foundation of Tianjin City

National Natural Science Foundation of China

Science and Technology Planning Project of Tianjin City

Open Project of State Key Laboratory of Functional Materials for Information

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

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