High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition-Reference-Cited by-同舟云学术

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition

Published:2020-08-27 Issue:9 Volume:13 Page:095504
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Shimizu Ayumu,Tsuno Shintaro,Kamiyama Masahiro,Ishibashi Keiju,Kitamoto Akira,Imanishi Masayuki,Yoshimura Masashi,Hata Masahiko,Isemura Masashi,Mori Yusuke

Funder

Ministry of Environment

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/abaf0f/pdf

Reference30 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Prospects for LED lighting

3. Recent progress of GaN power devices for automotive applications

4. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

5. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

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1. Thermodynamic analysis of oxide vapor phase epitaxy of GaN;Journal of Applied Physics;2023-08-28

2. Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method;Journal of Crystal Growth;2022-03

3. Recent Progress in Crystal Growth of Bulk GaN;Acta Physica Polonica A;2022-03

4. High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C;Applied Physics Express;2022-02-14

5. Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation;Journal of Crystal Growth;2021-09