Impact of channel mobility on design optimization of 600–3300 V-class high-speed GaN vertical-trench MOSFETs based on TCAD simulation
Author:
Funder
Council for Science, Technology and Innovation
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ac18af/pdf
Reference27 articles.
1. Wide bandgap semiconductor power devices for energy efficient systems
2. Recent progress of GaN power devices for automotive applications
3. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
4. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
5. 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates
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1. GaN Vertical Transistors with Staircase Channels for High-Voltage Applications;Materials;2023-01-06
2. Comparison of switching performance of high-speed GaN vertical MOSFETs with various gate structures based on TCAD simulation;Japanese Journal of Applied Physics;2022-12-05
3. Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs;Applied Physics Express;2022-06-10
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