Author:
Ebrish Mona A.,Porter Matthew,Jacobs Alan,Gallagher James C.,Kaplar Robert J.,Gunning Brendan P.,Hobart Karl D.,Anderson Travis J.
Abstract
Abstract
Foundry compatible vertical GaN PiN diodes were fabricated. The devices investigated in this work are based on 8 um drift layer thickness to achieve ∼1.2 kV of voltage blocking. Three different anode doping levels were fabricated on three wafers with the same p-layer thickness, and planar hybrid edge termination. The moderate anode doping level of 1 × 1018 cm−3 has achieved the highest breakdown voltage of 1.2 kV and its temperature-dependent breakdown behavior proved an avalanche behavior. Furthermore, our electroluminescence displayed the breakdown at the edge of the anode. Our simulation results imply an improvement in the field management with moderate anode doping.
Subject
General Physics and Astronomy,General Engineering