Degradation Mechanisms of GaN‐Based Vertical Devices: A Review-Reference-Cited by-同舟云学术

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Published:2020-01-22 Issue:7 Volume:217 Page:1900750
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Meneghini Matteo¹^ORCID,Fabris Elena¹,Ruzzarin Maria¹,De Santi Carlo¹,Nomoto Kazuki²,Hu Zhenqi²,Li Wenshen²,Gao Xingya³,Jena Debdeep²,Xing Huili Grace²,Sun Min⁴,Palacios Tomas⁴,Meneghesso Gaudenzio¹,Zanoni Enrico¹

Affiliation:

1. Department of Information EngineeringUniversity of Padua 35131 Padua Italy

2. School of Electrical and Computer EngineeringCornell University 425 Philips Hall Ithaca NY 14853 USA

3. IQE RF LLC 394 Elizabeth Ave. Somerset NJ 08873 USA

4. Department of Electrical Engineering and Computer ScienceMassachusetts Institute of Technology 50 Vassar St. Cambridge MA 02139 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900750

Reference99 articles.

1. Available online athttps://www.transphormusa.com/en/document/datasheet-tp90h180ps-900v-gan-fet/(accessed: January 2020).

2. Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

3. Field-Plate Engineering for HFETs

4. T.Mizoguchi T.Naka Y.Tanimoto Y.Okada W.Saito M.Miura-Mattausch H. J.Mattausch inProc. Int. Symp. Power Semicond. Devices ICs Vol.2016 IEEE Prague Czech Republic2016 pp.267–270.

5. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

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