Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements-Reference-Cited by-同舟云学术

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Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

Published:2013-06-21 Issue:7 Volume:28 Page:074021
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Meneghesso Gaudenzio,Meneghini Matteo,Bisi Davide,Rossetto Isabella,Cester Andrea,Mishra Umesh K,Zanoni Enrico

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=7/a=074021/pdf

Reference26 articles.

1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

2. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

3. Drain Current DLTS of AlGaN–GaN MIS-HEMTs

4. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Cited by 75 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous dynamic performance in heterogeneous Ga₂O₃-on-SiC MOSFETs fabricated using ion-implantation cutting process;Physica Scripta;2024-09-04

2. A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2024-08-20

3. Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2024-06

4. On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed;International Journal of High Speed Electronics and Systems;2024-02-23

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