Abstract
Abstract
In this work, we demonstrate the first achievement in heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (β-phase) structure with a monofamily {
2
¯
01} plane was obtained. XRD pole figure shows (
2
̅
02) and (002) textures of the (
2
̅
01) β-Ga2O3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β-Ga2O3 on diamond via sputtering, paving the way for scalable β-Ga2O3/diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.
Funder
Japan Society for the Promotion of Science
Subject
General Physics and Astronomy,General Engineering
Cited by
1 articles.
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