InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%

Abstract

Abstract We demonstrate high-performance 10 × 10 μm2 InGaN amber micro-size LEDs (μLEDs). At 15 A cm−2, the InGaN μLEDs show a single emission peak located at 601 nm. The peak external quantum efficiency (EQE) and wall-plug efficiency are 5.5% and 3.2%, respectively. Compared to the 100 × 100 μm2 μLEDs, the 10 × 10 μm2 InGaN red μLEDs maintain a similar EQE value with the same efficiency droop. These results point out that InGaN materials are much more promising for higher efficiency than the common AlInGaP materials for the ultra-small size red μLEDs required by augmented reality and virtual reality displays.