OPTICAL AND ELECTROPHYSICAL PROPERTIES OF GATE DIELECTRICS OBTAINED BY MEANS OF RAPID THERMAL PROCESSING-Reference-Cited by-同舟云学术

OPTICAL AND ELECTROPHYSICAL PROPERTIES OF GATE DIELECTRICS OBTAINED BY MEANS OF RAPID THERMAL PROCESSING

Published:2022 Issue:3 Volume:26 Page:59-68
ISSN:1093-3611
Container-title:High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes
language:en
Short-container-title:High Temp Mat Proc

Author:

Kovalchuk N. S.,Marudo Yu. A.,Omelchenko A. A.,Pilipenko Vladimir A.,Solodukha Vitaly A.,Demidovich S. A.,Kolos V. V.,Kozlova E. S.,Filipenya V. A.,Shestovski D. V.

Publisher

Begell House

Subject

Physical and Theoretical Chemistry,Spectroscopy,General Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,General Materials Science

Link

https://www.dl.begellhouse.com/download/article/3bd98a980d28d340/HTM-43900.pdf

Reference20 articles.

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5. Christiano, V. and dos Santos Filho, S.G., Physical Characterization of Ultrathin Silicon Oxynitrides Grown by Rapid Thermal Processing Aiming to MOS Tunnel Devices, IOP Conf. Ser.: Mater. Sci. Eng., vol. 76, Article ID 01200, 2015.